silicon rf power semiconductors ra30h2127m rohs compliance , 210-270mhz 30w 12.5v, 2 stage amp. for mobile radio ra30h2127m 24 jun 2010 1/9 electrostatic sensitive device observe handling precautions description the ra30h2127m is a 30-watt rf mosfet amplifier module for 12.5-volt mobile radios that operate in the 210- to 270-mhz range. the battery can be connected dire ctly to the drain of the enhancement-mode mosfet transistors. without the gate voltage (v gg =0v), only a small leakage current flows into the drain and the rf input signal a ttenuates up to 60 db. the output power and drain current increase as the gate voltage increases. with a gate voltage around 4v (minimum), output power and drain current increases substant ially. the nominal output power becomes available at 4.5v (t ypical) and 5v (maximum). at v gg =5v, the typical gate current is 1 ma. this module is designed for non-linear fm modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. features ? enhancement-mode mosfet transistors (i dd ? 0 @ v dd =12.5v, v gg =0v) ? p out >30w, t >40% @ v dd =12.5v, v gg =5v, p in =50mw ? broadband frequency range: 210-270mhz ? low-power control current i gg =1ma (typ) at v gg =5v ? module size: 66 x 21 x 9.88 mm ? linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power rohs compliance ? ra30h2127m-101 is a rohs compliant products. ? rohs compliance is indicate by the letter ?g? after the lot marking. ? this product include the lead in the glass of electronic parts and the lead in electronic ceramic parts. how ever ,it applicable to the following exceptions of rohs directions. 1.lead in the glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.lead in electronic ceramic parts. ordering information: order number supply form ra30h2127m-101 antistatic tray, 10 modules/tray block diagram 1 rf input (p in ) 2 gate voltage (v gg ), power control 3 drain voltage (v dd ), battery 4 rf output (p out ) 5 rf ground (case) 3 2 4 1 5 package code: h2s
silicon rf power semiconductors rohs compliance ra30h2127m ra30h2127m 24 jun 2010 2/9 electrostatic sensitive device observe handling precautions maximum ratings (t case =+25c, unless otherwise specified) symbol parameter conditions rating unit v dd drain voltage v gg <5v 17 v v gg gate voltage v dd <12.5v, p in =0mw 6 v p in input power 100 mw p out output power 45 w t case(op) operation case temperature range f=210-270mhz, z g =z l =50 ? -30 to +110 c t stg storage temperature range -40 to +110 c the above parameters ar e independently guaranteed. electrical characteristics (t case =+25c, z g =z l =50 ? , unless otherwise specified) symbol parameter conditions min typ max unit f frequency range 210 - 270 mhz p out output power 30 - - w t total efficiency 40 - - % 2f o 2 nd harmonic - - -25 dbc in input vswr - - 3:1 ? i gg gate current v dd =12.5v, v gg =5v, p in =50mw - 1 - ma ? stability v dd =10.0-15.2v, p in =25-70mw, p out <40w (v gg control), load vswr=3:1 no parasitic oscillation ? ? load vswr tolerance v dd =15.2v, p in =50mw, p out =30w (v gg control), load vswr=20:1 no degradation or destroy ? all parameters, conditions, ratings, and limit s are subject to change without notice.
silicon rf power semiconductors rohs compliance ra30h2127m ra30h2127m 24 jun 2010 3/9 electrostatic sensitive device observe handling precautions output power, total efficiency, 2 nd , 3 rd harmonics versus frequency and input vswr versus frequency output power, power gain and output power, power gain and drain current versus input powe r drain current versus input power 0 10 20 30 40 50 60 200 210 220 230 240 250 260 270 280 frequency f(mhz) output power p out (w) input vswr in (-) 0 20 40 60 80 100 120 total efficiency t (%) v dd =12.5v v gg =5v p in =50mw p out t in 0 10 20 30 40 50 60 -10 -5 0 5 10 15 20 input power p in (dbm) output power p out (dbm) power gain gp(db) 0 2 4 6 8 10 12 drain current i dd (a) f=210mhz, v dd =12.5v, v gg =5v p out i dd gp 0 10 20 30 40 50 60 -10 -5 0 5 10 15 20 input power p in (dbm) output power p out (dbm) power gain gp(db) 0 2 4 6 8 10 12 drain current i dd (a) f=240mhz, v dd =12.5v, v gg =5v p out gp i dd -70 -60 -50 -40 -30 -20 200 210 220 230 240 250 260 270 280 frequency f(mhz) harmonics (dbc) v dd =12.5v v gg =5v p in =50mw 2 nd 3 rd : < -60dbc output power, power gain and drain current versus input power output power and drain current output power and drain current versus drain voltage versus drain voltage 0 10 20 30 40 50 60 70 80 90 246810121416 drain voltage v dd (v) output power p out (w) 0 2 4 6 8 10 12 14 16 18 drain current i dd (a) p out f=210mhz, v dd =12.5v, v gg =5v i dd 0 10 20 30 40 50 60 -10 -5 0 5 10 15 20 input power p in (dbm) output power p out (dbm) power gain gp(db) 0 2 4 6 8 10 12 drain current i dd (a) f=270mhz, v dd =12.5v, v gg =5v p out gp i dd 0 10 20 30 40 50 60 70 80 90 2 4 6 8 10 12 14 16 drain voltage v dd (v) output power p out (w) 0 2 4 6 8 10 12 14 16 18 drain current i dd (a) p out f=240mhz, v dd =12.5v, v gg =5v i dd typical performance (t case =+25c, z g =z l =50 ? , unless otherwise specified)
silicon rf power semiconductors rohs compliance ra30h2127m ra30h2127m 24 jun 2010 4/9 electrostatic sensitive device observe handling precautions typical performance (t case =+25c, z g =z l =50 ? , unless otherwise specified) output power and drain current versus drain voltage output power and drain current output power and drain current versus gate voltage versus gate voltage output power and drain current versus gate voltage 0 10 20 30 40 50 60 22.533.544.55 gate voltage v gg (v) output power p out (w) 0 2 4 6 8 10 12 drain current i dd (a) p out f=210mhz, v dd =12.5v, v gg =5v i dd 0 10 20 30 40 50 60 70 80 90 2 4 6 8 10 12 14 16 drain voltage v dd (v) output power p out (w) 0 2 4 6 8 10 12 14 16 18 drain current i dd (a) p out f=270mhz, v dd =12.5v, v gg =5v i dd 0 10 20 30 40 50 60 2 2.5 3 3.5 4 4.5 5 gate voltage v gg (v) output power p out (w) 0 2 4 6 8 10 12 drain current i dd (a) p out f=240mhz, v dd =12.5v, v gg =5v i dd 0 10 20 30 40 50 60 22.533.544.55 gate voltage v gg (v) output power p out (w) 0 2 4 6 8 10 12 drain current i dd (a) p out f=270mhz, v dd =12.5v, v gg =5v i dd
silicon rf power semiconductors rohs compliance ra30h2127m ra30h2127m 24 jun 2010 5/9 electrostatic sensitive device observe handling precautions outline drawing ( mm ) 1 rf input (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf output (p out ) 5 rf ground (case) 12.0 1 16.5 1 43.5 1 55.5 1 66.0 0.5 60.0 0.5 51.5 0.5 3.0 0.3 7.25 0.8 14.0 1 21.0 0.5 9.5 0.5 2.0 0.5 2-r2 0.5 17.0 0.5 ?0.45 0.15 4.0 0.3 5 1 2 3 4 3.1 +0.6/-0.4 7.5 0.5 2.3 0.3 (9.88) (50.4) 0.09 0.02
silicon rf power semiconductors rohs compliance ra30h2127m ra30h2127m 24 jun 2010 6/9 electrostatic sensitive device observe handling precautions 1 rf input (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf output (p out ) 5 rf ground (case) c1, c2: 4700pf, 22uf in parallel directional coupler attenuator power meter spectrum analyzer signal generator attenuator pre- amplifier power meter directional coupler dut 5 4 3 2 1 z g =50 ? ? c1 c2 - + dc power supply v gg + - dc power supply v dd test block diagram attenuator equivalent circuit 2 3 1 5 4
silicon rf power semiconductors rohs compliance ra30h2127m ra30h2127m 24 jun 2010 7/9 electrostatic sensitive device observe handling precautions recommendations and application information: construction: this module consists of an alumina substrate soldered onto a copper flange. for mechanical protection, a plastic cap is attached with silicone. t he mosfet transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. lines on the substrate (e ventually inductors), chip c apacitors, and resistors form the bias and matching circuits. wire leads soldered onto the alumina substrate prov ide the dc and rf connection. following conditions must be avoided: a) bending forces on the alumina substrate (for exampl e, by driving screws or from fast thermal changes) b) mechanical stress on the wire leads (f or example, by first soldering then dr iving screws or by thermal expansion) c) defluxing solvents reacting with the resin coating on the mosfet chip s (for example, trichloroethylene) d) frequent on/off switching that caus es thermal expansion of the resin e) esd, surge, overvoltage in combi nation with load vswr, and oscillation esd: this mosfet module is sensitive to esd voltages down to 1000v. appropria te esd precautions are required. mounting: heat sink flatness must be less than 50 m (a heat sink t hat is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). a thermal compound between module and heat sink is re commended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink. the module must first be screwed to the heat sink, then t he leads can be soldered to the printed circuit board. m3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm. soldering and defluxing: this module is designed for manual soldering. the leads must be soldered after the module is screwed onto the heat sink. the temperature of the lead (terminal) soldering should be lower than 350c and shorter than 3 second. ethyl alcohol is recommend for removing flux. trichl oroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). thermal design of the heat sink: at p out =30w, v dd =12.5v and p in =50mw each stage transistor operating conditions are: stage p in (w) p out (w) r th(ch-case) (c/w) i dd @ t =40% (a) v dd (v) 1 st 0.05 4.5 23.0 0.47 2 nd 4.5 30.0 1.2 5.5 12.5 the channel temperatures of each stage transistor t ch = t case + (v dd x i dd - p out + p in ) x r th(ch-case) are: t ch1 = t case + (12.5v x 0.47a ? 4.5w + 0.05w) x 23.0c/w = t case + 32.8 c t ch2 = t case + (12.5v x 5.5a - 30.0w + 4.5w) x 1.2c/w = t case + 51.9 c for long-term reliability, it is best to keep the module case temperature (t case ) below 90c. for an ambient temperature t air =60c and p out =30w, the required thermal resistance r th (case-air) = ( t case - t air ) / ( (p out / t ) - p out + p in ) of the heat sink, including the contact resistance, is: r th(case-air) = (90c - 60c) / (30w/40% ? 30w + 0.05w) = 0.67 c/w when mounting the module with the thermal resistance of 0.67 c/w, the channel temperature of each stage transistor is: t ch1 = t air + 62.8 c t ch2 = t air + 81.9 c the 175c maximum rating for the channel temperat ure ensures application under derated conditions.
silicon rf power semiconductors rohs compliance ra30h2127m ra30h2127m 24 jun 2010 8/9 electrostatic sensitive device observe handling precautions output power control: depending on linearity, the following two methods are recommended to control the output power: a) non-linear fm modulation: by the gate voltage (v gg ). when the gate voltage is close to zero, the rf input signal is attenuated up to 60 db and only a small leakage current flows from the battery into the drain. around v gg =4v, the output power and drain cu rrent increases substantially. around v gg =4.5v (typical) to v gg =5v (maximum), the nominal out put power becomes available. b) linear am modulation: by rf input power p in . the gate voltage is used to set the drain?s quiescent current for the required linearity. oscillation: to test rf characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pf chip capacitor, located close to t he module, and a 22 f (or more) electrolytic capacitor. when an amplifier circuit around this module show s oscillation, the following may be checked: a) do the bias decoupling capacitors have a lo w inductance pass to the case of the module? b) is the load impedance z l =50 ? ? c) is the source impedance z g =50 ? ? attention: 1.high temperature; this product might have a heat gener ation while operation,please take notice that have a possibility to receive a burn to touch the operating product dire ctly or touch the product until cold after switch off. at the near the product,do not place the combustible ma terial that have possibilities to arise the fire. 2. generation of high frequency power; this product gener ate a high frequency power. please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3. before use; before use the product,please design the equipment in considerat ion of the risk for human and electric wave obstacle for equipment. precaution for the use of mitsubishi si licon rf power amplifier devices: 1.the specifications of mention ar e not guarantee values in this data s heet. please confirm additional details regarding operation of these products from the formal specif ication sheet. for copies of the formal specification sheets, please contact one of our sales offices. 2.ra series products (rf power amplifier modules) ar e designed for consumer mobile communication terminals and were not specifically designed for use in other applicat ions. in particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality a ssurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. examples of critical communications elements would include transmitters fo r base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3.ra series products use mosfet semiconductor tec hnology. they are sensitive to esd voltage therefore appropriate esd precautions are required. 4.in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat-sink in c onjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for ra seri es products lower than 60deg/c under standard conditions, and less than 90deg/c under extreme conditions. 5.ra series products are designed to operate into a nom inal load impedance of 50 ohms. under the condition of operating into a severe high load vswr approaching an open or short, an over load condition could occur. in the worst case there is risk for burn out of the transistors and burning of other parts including the substrate in the module. 6.the formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch condition. the inspection for parasit ic oscillation is performed on a sample basis on our manufacturing line. it is recommended that verification of no parasitic oscillation be performed at the completed equipment level also. 7.for specific precautions regarding assembly of t hese products into the equipment, please refer to the supplementary items in the specification sheet. 8.warranty for the product is void if the products protective cap (lid) is remov ed or if the product is modified in any way from it?s original form. 9.for additional ?safety first? in your circuit design and notes regarding the ma terials, please refer the last page of this data sheet. 10. please refer to the additional precauti ons in the formal specification sheet.
silicon rf power semiconductors rohs compliance ra30h2127m ra30h2127m 24 jun 2010 9/9 electrostatic sensitive device observe handling precautions m itsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possib ility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fi re or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against a n y m a lf u n ct i o n o r mi s h ap . keep safety first in your circuit designs ! - these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mits ubishi electric corporation or a third party. - mitsubishi electric corporation assumes no res ponsibility for any damage, or infringement of any third-party?s rights, originating in the use of any product data, diagram s, charts, programs, algorithms, or circuit application examples contained in these materials. - all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by mitsubishi el ectric corporation without notic e due to product improvements or other reasons. it is therefore recommended that custom ers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distribut or for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric cor poration assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http://www.mitsubishichips.com). - when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of t he information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. - mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumst ances in which human life is potent ially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein fo r any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. - the prior written approval of mitsubishi electric co rporation is necessary to reprint or reproduce in whole or in part these materials. - if these products or technologies are subject to the japanese export c ontrol restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the a pp roved destination. notes regarding these materials
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